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tucker davis technology electrostatic speaker coupler model  (Tucker-Davis Tech)

 
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    Tucker-Davis Tech tucker davis technology electrostatic speaker coupler model
    Tucker Davis Technology Electrostatic Speaker Coupler Model, supplied by Tucker-Davis Tech, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electrostatic+model/davis+iii+iii+system+tdt+technology+tucker/pmc12923069-72-0-0
    Average 86 stars, based on 1 article reviews
    tucker davis technology electrostatic speaker coupler model - by Bioz Stars, 2026-09
    86/100 stars

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    Article Title: Auditory filter shapes of CBA/CaJ mice: behavioral assessments.
    Article Snippet: Auditory filter shape and frequency tuning may be derived by measuring changes in pure tone thresholds as a function of the bandwidth of notched-noise maskers.. When these psychophysical methods were applied to CBA/CaJ mice, the resulting filter shapes were well fit by roex p ,r functions originally developed for human subjects.. The equivalent rectangular bandwidths ERBs of the filter shapes ranged from 16 to 19% of test frequencies between 8 to 16 kHz.

    Article Title: Sex Differences in Auditory Brainstem Responses in the Hispid Pocket Mouse ( Chaetodipus hispidus )
    Article Snippet: Tucker-Davis Technology Electrostatic Speakers (TDT EC-1) and Tucker-Davis Technology Electrostatic Speaker-Coupler Model (TDT MF-1) were used to present acoustic stimuli of 32 to 64 kHz and 1 to 24 kHz of frequencies/click stimuli respectively.

    Article Title: Plasticity of neural circuits in the auditory system
    Article Snippet: A Tucker-Davis Technologies coupler model electrostatic speaker was used to present all acoustic stimuli into the left ear (contralateral to the recorded cortical hemisphere).

    Transduction:

    Article Title: Auditory filter shapes of CBA/CaJ mice: behavioral assessments.
    Article Snippet: Auditory filter shape and frequency tuning may be derived by measuring changes in pure tone thresholds as a function of the bandwidth of notched-noise maskers.. When these psychophysical methods were applied to CBA/CaJ mice, the resulting filter shapes were well fit by roex p ,r functions originally developed for human subjects.. The equivalent rectangular bandwidths ERBs of the filter shapes ranged from 16 to 19% of test frequencies between 8 to 16 kHz.

    Article Title: Sex Differences in Auditory Brainstem Responses in the Hispid Pocket Mouse ( Chaetodipus hispidus )
    Article Snippet: Tucker-Davis Technology Electrostatic Speakers (TDT EC-1) and Tucker-Davis Technology Electrostatic Speaker-Coupler Model (TDT MF-1) were used to present acoustic stimuli of 32 to 64 kHz and 1 to 24 kHz of frequencies/click stimuli respectively.

    Article Title: Plasticity of neural circuits in the auditory system
    Article Snippet: A Tucker-Davis Technologies coupler model electrostatic speaker was used to present all acoustic stimuli into the left ear (contralateral to the recorded cortical hemisphere).



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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Journal: ACS Nano

    Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

    doi: 10.1021/acsnano.4c14500

    Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

    Techniques: